【摘要】：碳化硅(SiC)是新型功率半導(dǎo)體材料之一,具有禁帶寬、擊穿電場(chǎng)高、熱導(dǎo)率高、載流子漂移速率高、功率密集度高等諸多優(yōu)點(diǎn)。以SiC材料為基礎(chǔ)的功率半導(dǎo)體器件以優(yōu)越的性能引起了廣泛關(guān)注。其中,SiC MOSFET成為科研人員關(guān)注的熱點(diǎn)。隨著對(duì)SiC MOSFET研究的不斷深入,建立精確的SiC MOSFET器件模型是亟待解決的問題之一,成為研究的焦點(diǎn)。本文依托于國網(wǎng)智能電網(wǎng)研究院"1200V SiC MOSFET器件制備及應(yīng)用特性關(guān)鍵技術(shù)研究”項(xiàng)目,針對(duì)SiCMOSFET器件建模展開了研究工作。本文調(diào)研了大量功率器件模型,對(duì)前人的模型進(jìn)行了總結(jié)分析,沒有采用物理模型和傳統(tǒng)的硅(Si) MOSFET模型,而采用功率半導(dǎo)體界普遍認(rèn)可的變溫度參數(shù)建模方法。本文以市場(chǎng)上使用最廣的CREE公司第二代SiC MOSFET器件為例,進(jìn)行建模原理的分析與介紹。本文首先對(duì)CREE公司提供的Spice標(biāo)準(zhǔn)測(cè)試模型進(jìn)行了靜態(tài)特性與動(dòng)態(tài)特性測(cè)試,把此結(jié)果作為標(biāo)準(zhǔn)。然后,重點(diǎn)介紹了在PSpice軟件中建立SiC MOSFET變溫度參數(shù)模型的全過程。對(duì)從技術(shù)手冊(cè)中選取建模需要的參數(shù)進(jìn)行了詳細(xì)介紹,給出了溫控電阻、溫度控制電壓源、溫度控制電流源在PSpice軟件中建模的具體方法,對(duì)未來的研究工作具有指導(dǎo)意義。將靜態(tài)模型在不同溫度點(diǎn)下的仿真結(jié)果與Spice標(biāo)準(zhǔn)測(cè)試模型的測(cè)試結(jié)果進(jìn)行對(duì)比,驗(yàn)證模型在不同溫度點(diǎn)下的有效性與準(zhǔn)確性。最后,對(duì)動(dòng)態(tài)建模進(jìn)行了分析介紹,根據(jù)半導(dǎo)體器件理論知識(shí),改變了前人對(duì)于靜態(tài)模型組成的劃分方法,將體二極管建模歸為動(dòng)態(tài)建模部分,使建模更科學(xué)。對(duì)于影響動(dòng)態(tài)特性的關(guān)鍵部分進(jìn)行了詳細(xì)介紹。將動(dòng)態(tài)仿真結(jié)果與Spice標(biāo)準(zhǔn)測(cè)試模型的測(cè)試結(jié)果進(jìn)行對(duì)比,驗(yàn)證模型動(dòng)態(tài)特性的準(zhǔn)確性。
[Abstract]:Silicon carbide (sic) (SiC) is one of the new power semiconductor materials, which has many advantages, such as wide band gap, high breakdown electric field, high thermal conductivity, high carrier drift rate, high power intensity and so on. Power semiconductor devices based on SiC materials have attracted wide attention due to their superior performance. Among them, sic MOSFET has become the focus of attention. With the development of SiC MOSFET research, the establishment of accurate SiC MOSFET device model is one of the problems to be solved and becomes the focus of research. In this paper, based on the project of "Research on the key Technologies of 1200V SiC MOSFET device Fabrication and Application characteristics" of China Smart Grid Research Institute, the research work on SiCMOSFET device modeling is carried out. In this paper, a large number of power device models have been investigated, and the previous models have been summarized and analyzed. Instead of physical model and traditional silicon (Si) MOSFET model, the widely accepted variable temperature parameter modeling method in power semiconductor field has been adopted. This paper analyzes and introduces the modeling principle of the second generation SiC MOSFET device of CREE Company, which is widely used in the market. In this paper, the static and dynamic characteristics of the Spice standard test model provided by CREE are tested, and this result is regarded as the standard. Then, the whole process of establishing SiC MOSFET variable temperature parameter model in PSpice software is introduced. This paper introduces in detail the parameters needed for modeling from the technical manual, and gives the methods of modeling temperature controlled resistor, temperature controlled voltage source and temperature controlled current source in PSpice software, which is of guiding significance for future research work. The simulation results of static model at different temperature points are compared with the test results of Spice standard test model to verify the validity and accuracy of the model at different temperature points. Finally, the dynamic modeling is analyzed and introduced. According to the theoretical knowledge of semiconductor devices, the former partition method of static model composition is changed, and the volume diode modeling is classified into dynamic modeling part, which makes the modeling more scientific. The key parts which affect the dynamic characteristics are introduced in detail. The dynamic simulation results are compared with the test results of the Spice standard test model to verify the accuracy of the dynamic characteristics of the model.
【學(xué)位授予單位】：華北電力大學(xué)
【學(xué)位級(jí)別】：碩士
【學(xué)位授予年份】：2015
【分類號(hào)】：TN386

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相關(guān)期刊論文 前1條

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本文編號(hào)：2243068