【摘要】：基于華潤上華0.5μm雙極-CMOS-DMOS(BCD)工藝設計制備了不同保護環分布情況下的叉指型內嵌可控硅整流器的橫向擴散金屬氧化物半導體(LDMOS-SCR)結構器件,并利用傳輸線脈沖(TLP)測試比較靜電放電(ESD)防護器件的耐壓能力。以LDMOS-SCR結構為基礎,按照16指、8指、4指和2指設置保護環,形成4種不同類型的版圖結構。通過器件的直流仿真分析多指器件的開啟情況,利用傳輸線脈沖測試對比不同保護環版圖結構的耐壓能力。仿真和測試結果表明,改進后的3類版圖結構相對于普遍通用的第一類版圖結構,二次擊穿電流都有所提升,其中每8指設置一個保護環的版圖結構二次擊穿電流提升了76.36%,其單位面積的魯棒性能也最好,為相應工藝設計最高耐壓值的ESD防護器件提供了參考結構和方法。
[Abstract]:Based on the 0.5 渭 m bipolar-CMOS-DMOS (BCD) process of China Resources, the transverse diffused metal oxide semiconductor (LDMOS-SCR) structure device of cross-finger embedded thyristor rectifier with different protection ring distribution is designed and fabricated. The voltage resistance of electrostatic discharge (ESD) protective devices is measured and compared by transmission line pulse (TLP). Based on LDMOS-SCR structure, four different types of layout structures are formed by setting protective rings according to 16 fingers, 8 fingers, 4 fingers and 2 fingers. Through the DC simulation of the device, the opening of the multi-finger device is analyzed, and the voltage resistance of different protection ring layout structures is compared by using the transmission line pulse test. The simulation and test results show that the secondary breakdown current of the improved three types of layout structures is higher than that of the first kind of layout structures. The secondary breakdown current of each 8 fingers with a protective ring is increased by 76.36%, and the robust performance per unit area is the best, which provides a reference structure and method for the ESD protective device with the highest voltage withstand value of the corresponding process design.
【作者單位】： 中國科學技術大學電子科學與技術系;中國科學院自動化研究所國家專用集成電路設計工程技術研究中心;
【分類號】：TN386.1

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本文編號：2482986