一種新型低功耗電流模式CMOS帶隙基準設計
發布時間：2019-05-23 06:16
【摘要】：為了降低傳統帶隙基準源的功耗和面積,提出了一種新型基于電流模式高階曲率修正的帶隙基準電壓源電路。通過改進的電流模式曲率校正方法實現高階溫度補償,并且通過集電極電流差生成絕對溫度成正比PTAT(Proportional To Absolute Temperature)電流,因此所需電阻以及雙極型晶體管BJT(Bipolar Junction Transistor)數量更少。采用標準0.35μm CMOS技術對提出電路進行了具體實現。測量結果顯示,溫度在-40℃～130℃之間時,電路溫度系數為6.85×10~(-6)/℃,且能產生508.5 mV的基準電壓。相比其他類似電路,當供電電源為3.3 V時,提出電路的整體靜態電流消耗僅為9.8μA,面積僅為0.09 mm~2。
[Abstract]:In order to reduce the power consumption and area of the traditional bandgap reference source, a new bandgap voltage reference circuit based on current mode high order curvature correction is proposed. The high order temperature compensation is realized by the improved current mode curvature correction method, and the absolute temperature is proportional to the PTAT (Proportional To Absolute Temperature) current by the collector current difference. As a result, the required resistance and the number of Bipolar transistor BJT (Bipolar Junction Transistor) are even smaller. The standard 0.35 渭 m CMOS technology is used to realize the proposed circuit. The measurement results show that when the temperature is between-40 鈩，
本文編號：2483668
[Abstract]:In order to reduce the power consumption and area of the traditional bandgap reference source, a new bandgap voltage reference circuit based on current mode high order curvature correction is proposed. The high order temperature compensation is realized by the improved current mode curvature correction method, and the absolute temperature is proportional to the PTAT (Proportional To Absolute Temperature) current by the collector current difference. As a result, the required resistance and the number of Bipolar transistor BJT (Bipolar Junction Transistor) are even smaller. The standard 0.35 渭 m CMOS technology is used to realize the proposed circuit. The measurement results show that when the temperature is between-40 鈩，
本文編號：2483668
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